Masuk Bebas bergabung
1 / 1
20V 4A SOT-23 P-MOS
| Model No. : | ATM2301APSA |
|---|---|
| Brand Name : | agertech |
| Certification : | ISO |
Hong Kong, Hong Kong, China
- Pabrikan
- Perusahaan perdagangan
- Layanan OEM
- Sertifikasi Platform
Deskripsi Produk
ATM2301APSA adalah Transistor Efek Mode P-Channel Enhancement Mode dalam paket SOT23. Drain-Source Voltage: -20V dan Drain Current: -4A. Fitur utama ATM2301APSA adalah Trench FET Power MOSFE, Excellent RDS (on) dan Low Gate Charge, R DS (ON) <90mΩ (V GS = -4.5V) dan R DS (ON) <110mΩ (V GS = -2.5 V). Aplikasi utama adalah DC / DC Converter, Load Switch untuk Perangkat Portable, Battery Switch.
Peringkat maksimum absolut (Ta = 25 ℃ kecuali dinyatakan lain)
|
Parameter |
Symbol |
Value |
Unit |
|
Drain-Source Voltage |
VDS |
-20 |
V |
|
Gate-Source Voltage |
VGS |
±12 |
V |
|
Continuous Drain Current |
ID |
-4 |
A |
|
Pulsed Drain Current |
IDM |
-16 |
A |
|
Power Dissipation |
PD |
0.83 |
W |
|
Thermal Resistance from Junction to Ambient |
RθJA |
357 |
℃/W |
|
Junction Temperature |
TJ |
150 |
℃ |
|
Storage Temperature |
TSTG |
-55~ +150 |
℃ |
Karakteristik listrik (T A = 25 o C, kecuali jika tidak dicatat)
|
Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
|
Static Characteristics |
||||||
|
Drain-source breakdown voltage |
V(BR)DSS |
VGS = 0V, ID =-250µA |
-20 |
|
|
V |
|
Zero gate voltage drain current |
IDSS |
VDS =-16V,VGS = 0V |
|
|
-1 |
µA |
|
Gate-body leakage current |
IGSS |
VGS =±12V, VDS = 0V |
|
|
±100 |
nA |
|
Gate threshold voltage |
VGS(th) |
VDS =VGS, ID =-250µA |
-0.5 |
-0.7 |
-1 |
V |
|
Drain-source on-resistance1) |
RDS(on) |
VGS = -4.5V, ID = -0.5A |
|
70 |
90 |
mΩ |
|
VGS = -2.5V, ID = -0.5A |
|
90 |
110 |
|||
|
Forward transconductance1) |
gFS |
VDS =-5V, ID =-2A |
5 |
|
|
S |
|
Dynamic characteristics2) |
||||||
|
Input Capacitance |
Ciss |
VDS =-10V,VGS =0V,f =1MHz |
|
405 |
|
pF |
|
Output Capacitance |
Coss |
|
75 |
|
||
|
Reverse Transfer Capacitance |
Crss |
|
55 |
|
||
|
Gate resistance |
Rg |
f =1MHz |
|
6 |
|
Ω |
|
Total Gate Charge |
Qg |
VDS =-10V,VGS =-2.5V,ID=-3A |
|
3.3 |
12 |
nC |
|
Gate-Source Charge |
Qgs |
|
0.7 |
|
||
|
Gate-Drain Charge |
Qgd |
|
1.3 |
|
||
|
Turn-on delay time |
td(on) |
VDD=-10V,VGEN=-4.5V,ID=-1A RL=10Ω,RGEN=1Ω |
|
11 |
|
ns |
|
Turn-on rise time |
tr |
|
35 |
|
||
|
Turn-off delay time |
td(off) |
|
30 |
|
||
|
Turn-off fall time |
tf |
|
10 |
|
||
|
Source-Drain Diode characteristics |
||||||
|
Diode Forward voltage |
VDS |
VGS =0V, IS=-1.25A |
|
-0.7 |
-1.3 |
V |
Catatan:
1) Uji Pulsa : Lebar Pulsa <300μs, Duty Cycle ≤2%.
2) Dijamin oleh desain, tidak dikenakan produksi pengujian.
Hong Kong, Hong Kong, China
- Pabrikan
- Perusahaan perdagangan
- Layanan OEM
- Sertifikasi Platform
Kirim pertanyaan Anda ke pemasok ini